BCV27T NXP Semiconductors, BCV27T Datasheet - Page 2
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BCV27T
Manufacturer Part Number
BCV27T
Description
Manufacturer
NXP Semiconductors
Datasheet
1.BCV27T.pdf
(7 pages)
Specifications of BCV27T
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
1.5@0.1mA@100mAV
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
FEATURES
• Medium current (max. 500 mA)
• Low voltage (max. 60 V)
• High DC current gain (min. 20 000).
APPLICATIONS
• Preamplifier input applications.
DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package.
PNP complements: BCV26 and BCV46.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 13
BCV27
BCV47
BCV27
BCV47
NUMBER
NPN Darlington transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
NAME
−
plastic surface mounted package; 3 leads
MARKING CODE
FG*
FF*
(1)
DESCRIPTION
2
PACKAGE
PINNING
handbook, halfpage
PIN
Top view
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
1
base
emitter
collector
3
2
DESCRIPTION
BCV27; BCV47
Product data sheet
1
TR1
VERSION
MAM298
TR2
SOT23
3
2