MT47H256M4HQ-3 IT:E TR Micron Technology Inc, MT47H256M4HQ-3 IT:E TR Datasheet - Page 124
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MT47H256M4HQ-3 IT:E TR
Manufacturer Part Number
MT47H256M4HQ-3 IT:E TR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H256M4HQ-3_ITE_TR.pdf
(135 pages)
Specifications of MT47H256M4HQ-3 IT:E TR
Organization
256Mx4
Density
1Gb
Address Bus
17b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Figure 73: REFRESH Command-to-Power-Down Entry
Figure 74: ACTIVATE Command-to-Power-Down Entry
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Note:
Note:
Command
Command
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
CK#
CKE
CK#
CKE
CK
CK
REFRESH command. Precharge power-down entry occurs prior to
fied.
VATE command. Active power-down entry occurs prior to
Valid
Valid
T0
T0
REFRESH
VALID
ACT
T1
T1
124
1 t CK
1 x t CK
Power-down 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Power-down 1
entry
entry
NOP
NOP
T2
T2
1Gb: x4, x8, x16 DDR2 SDRAM
t CKE (MIN)
t CKE (MIN)
T3
T3
t
RCD (MIN) being satisfied.
Power-Down Mode
© 2004 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
t
RFC (MIN) being satis-
t
CK after the ACTI-
t
CK after the
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