MT46H32M32LFCM-75 IT:A TR Micron Technology Inc, MT46H32M32LFCM-75 IT:A TR Datasheet - Page 71
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H32M32LFCM-75 IT:A TR
Manufacturer Part Number
MT46H32M32LFCM-75 IT:A TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H32M32LFCM-75_ITA_TR.pdf
(96 pages)
Specifications of MT46H32M32LFCM-75 IT:A TR
Organization
32Mx32
Density
1Gb
Address Bus
13b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Figure 34: WRITE Burst
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Notes:
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. An uninterrupted burst of 4 is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. D
Address
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
IN
CK
b = data-in for column b.
3
3
3
WRITE
Bank a,
Col b
T0
1,2
t DQSS
t DQSS
t DQSS
D
b
IN
71
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
Don’t Care
b+1
D
1Gb: x16, x32 Mobile LPDDR SDRAM
IN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
b+2
D
b+1
D
IN
IN
NOP
b+2
T2
D
IN
b+2
D
b+3
D
IN
IN
T2n
b+3
D
IN
Transitioning Data
b+3
D
IN
T3
NOP
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
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