MT47H128M8CF-25E:H Micron Technology Inc, MT47H128M8CF-25E:H Datasheet - Page 121
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H128M8CF-25E:H
Manufacturer Part Number
MT47H128M8CF-25E:H
Description
IC DDR2 SDRAM 1GBIT 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Series
-r
Datasheet
1.MT47H128M8CF-25EH.pdf
(134 pages)
Specifications of MT47H128M8CF-25E:H
Organization
128Mx8
Density
1Gb
Address Bus
17b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
125mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (128M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M8CF-25E:H
Manufacturer:
SAMSUNG
Quantity:
500 000
Company:
Part Number:
MT47H128M8CF-25E:H
Manufacturer:
MICRON
Quantity:
2 890
Company:
Part Number:
MT47H128M8CF-25E:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H128M8CF-25E:H
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT47H128M8CF-25E:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 70: READ-to-Power-Down or Self Refresh Entry
Figure 71: READ with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
DQS, DQS#
Command
DQS, DQS#
Command
Address
Address
CK#
CKE
A10
DQ
CK
CK#
CKE
A10
DQ
CK
Valid
READ
T0
Valid
READ
T0
Notes:
Notes:
NOP
T1
NOP
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
T1
RL = 3
entry is at T6.
entry is at T6.
RL = 3
NOP
T2
NOP
T2
NOP
T3
NOP
T3
DO
121
DO
DO
Valid
DO
T4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
DO
T4
DO
DO
1Gb: x4, x8, x16 DDR2 SDRAM
Valid
T5
DO
Valid
T5
Transitioning Data
Power-down 2 or
self refresh entry
Transitioning Data
NOP 1
self refresh 2 entry
Power-down or
Power-Down Mode
T6
© 2004 Micron Technology, Inc. All rights reserved.
NOP 1
T6
t CKE (MIN)
t CKE (MIN)
T7
Don’t Care
Don’t Care
T7