IXA60IF1200NA IXYS, IXA60IF1200NA Datasheet - Page 6

• Manufacturer Part Number: IXA60IF1200NA
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXA60IF1200NA

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 88
• Ic90, Tc = 90°c, Igbt, (a): 56
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 100
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 5.5
• Rthjc, Max, Igbt (c/w): 0.43
• If, Tc = 90°c, Diode (a): 51
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): 0.60
• Package Style: SOT-227
• Lead Free Status / Rohs Status: Supplier Unconfirmed

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
[A]
[A]
[mJ]
E
RR
I
F
rec
120
100
4.0
3.2
2.4
1.6
0.8
0.0
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
600
600
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
700
700
VJ
R
VJ
0.5
R
= 125°C
T
T
= 125°C
= 600 V
= 600 V
VJ
VJ
= 125°C
= 25°C
800
800
1.0
di
di
900
900
F
F
V
/dt [A/µs]
/dt [A/µs]
F
1.5
[V]
1000
1000
2.0
1100
1100
rec
versus di/dt
RM
vs. di/dt
2.5
1200
1200
F
120 A
60 A
30 A
120 A
60 A
30 A
1300
1300
3.0
Data according to IEC 60747and per diode unless otherwise specified
[K/W]
[ns]
Z
t
rr
thJC
[µC]
Q
rr
0.01
700
600
500
400
300
200
100
0.1
14
12
10
0.001
8
6
4
2
0
1
600
600
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
700
700
T
V
VJ
R
0.01
= 125°C
= 600 V
800
800
di
di
IXA60IF1200NA
900
900
F
F
t
/dt [A/µs]
/dt [A/µs]
p
0.1
[s]
1000
1000
rr
versus di/dt
1100
1100
T
V
VJ
R
= 125°C
1
= 600 V
rr
Diode
IGBT
vs. di/dt
1200
1200
120 A
60 A
30 A
120 A
60 A
30 A
20100623a
1300
1300
10