IXA60IF1200NA IXYS, IXA60IF1200NA Datasheet - Page 2

• Manufacturer Part Number: IXA60IF1200NA
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXA60IF1200NA

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 88
• Ic90, Tc = 90°c, Igbt, (a): 56
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 100
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 5.5
• Rthjc, Max, Igbt (c/w): 0.43
• If, Tc = 90°c, Diode (a): 51
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): 0.60
• Package Style: SOT-227
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Diode
F25
F
RM
rr
Equivalent Circuits for Simulation
1
2
3
4
rec(off)
thJC
90
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
Conditions
T = 25°C
T =
I =
V =
di /dt = -
I =
C4
F
F
C
C
R
F
60
90
60
600
Data according to IEC 60747and per diode unless otherwise specified
°C
A
A
1200
V
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA60IF1200NA
min.
min.
0.1
0.05
0.21
0.07
0.0025
0.03
0.03
0.08
IGBT
Ratings
Ratings
typ.
typ.
1.95
1.95
350
2.5
60
8
max.
max.
1.25
14.2
0.137
0.1
0.233
0.13
0.0025
0.03
0.03
0.08
2.2
0.6
1.1
Diode
85
51
28
20100623a
Unit
K/W
Unit
m
m
µC
mJ
ns
Ω
Ω
A
A
V
V
A
V
V