MPSA64 NXP Semiconductors, MPSA64 Datasheet - Page 3

• Manufacturer Part Number: MPSA64
• Manufacturer: NXP Semiconductors

Specifications of MPSA64

• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Oct 11
handbook, full pagewidth
R
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BEon
th(j-a)
PNP Darlington transistor
V
100000
80000
60000
40000
20000
CE
= 25 C unless otherwise specified.
h FE
= 2 V.
0
1
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
PARAMETER
PARAMETER
Fig.2 DC current gain; typical values.
10
V
V
V
V
I
V
V
C
C
CB
EB
CE
CE
CE
CE
= 100 mA; I
= 100 mA; I
= 30 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
3
note 1
CONDITIONS
C
C
C
C
C
E
= 10 mA; see Fig.2
= 100 mA; see Fig.2
= 100 mA
= 100 mA; f = 100 MHz 125
B
B
CONDITIONS
= 0 A
= 0 A
= 0.1 mA
= 0.1 mA
10
2
I C (mA)
VALUE
10000
20000
250
MIN.
Product specification
MAX.
100
100
1.5
1.5
2
MPSA64
MGD836
UNIT
K/W
10
nA
nA
V
V
V
MHz
3
UNIT