GP1S196HCZ0F Sharp Electronics, GP1S196HCZ0F Datasheet - Page 7

• Manufacturer Part Number: GP1S196HCZ0F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S196HCZ0F

• Number Of Elements: 1
• Output Device: Phototransistor
• Slit Width: 0.3mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 30mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 150000ns
• Rise Time: 150000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransistor
This product is assembled using the below parts.
sulfi de resin (UL94 V-0)
Infrared emitting diode
Black polyphernylene
Category
(non-coherent)
Category
Case
Silicon (Si)
Material
Gallium arsenide (GaAs)
Maximum Sensitivity
Material
Lead frame
42Alloy
wavelength (nm)
930
7
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
SnCu plating
700 to 1 200
950
Sensitivity
GP1S196HCZ0F/GP1S196HCZSF
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A01001EN
0.3
20