GP1S196HCZ0F Sharp Electronics, GP1S196HCZ0F Datasheet - Page 3

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GP1S196HCZ0F

Manufacturer Part Number
GP1S196HCZ0F
Description
Manufacturer
Sharp Electronics
Type
Transmissiver
Datasheet

Specifications of GP1S196HCZ0F

Number Of Elements
1
Output Device
Phototransistor
Slit Width
0.3mm
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
30mA
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
150000ns
Rise Time
150000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant

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Part Number:
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■ Absolute Maximum Ratings
■ Electro-optical Characteristics
1 For 3s or less
Output
Output Collector dark current
∗ 1
Transfer
teristics
charac-
Input
Input
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Forward voltage
Reverse current
Collector current
Collector-emitter saturation voltage
Response time
Parameter
Parameter
Rise time
Fall time
Symbol
V
V
T
T
T
P
V
P
I
I
P
CEO
ECO
opr
tot
stg
sol
F
C
C
R
Symbol
V
I
CE(sat)
V
CEO
I
I
t
t
R
C
r
f
− 40 to + 100
F
− 25 to + 85
Rating
100
260
30
75
35
20
75
6
6
V
CE
(T
3
= 5V, I
a
I
= 25˚C )
F
V
Unit
mW
mW
mW
= 10mA, I
mA
mA
˚C
˚C
˚C
V
V
V
CE
Condition
V
= 5V, I
I
C
F
V
= 100 μ A, R
= 20mA
CE
R
= 20V
= 3V
F
C
= 5mA
= 40 μ A
(GP1S196HCZ0F)
L
= 1k Ω
GP1S196HCZ0F/GP1S196HCZSF
MIN.
100
Soldering area
0.3mm or more
TYP.
1.2
50
50
Sheet No.: D3-A01001EN
MAX.
100
400
150
150
1.4
0.4
10
(T
a
= 25˚C )
Unit
μ A
μ A
nA
μ s
V
V

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