MT48V16M32L2B5-8 IT Micron Technology Inc, MT48V16M32L2B5-8 IT Datasheet - Page 6

• Manufacturer Part Number: MT48V16M32L2B5-8 IT
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V16M32L2B5-8 IT

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8.5/7.5ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 165mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Table 5:
Table 6:
PDF: 09005aef817f1b8c/Source: 09005aef818112f1
512Mb Mobile SDRAM_TwinDie_x32.fm - Rev. C 6/05 EN
Parameter/Condition
Parameter/Condition
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V ≤ V
(All other balls not under test = 0V)
Output Leakage Current: DQs are disabled; 0V ≤ V
V
Output Levels:
Output High Voltage (I
Output Low Voltage (I
Operating Current: Active Mode; Burst = 2; READ or
WRITE;
t
Standby Current: Power-Down Mode; All banks idle; CKE
= LOW
Standby Current: Power-Down Mode; All banks idle; CKE
= HIGH
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
Standby Current: Active Mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
Operating Current: Burst Mode; Continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle.
Auto Refresh Current
CKE = HIGH; CS# = HIGH
Deep power down
RC =
DD
Q
t
RC (MIN)
DC Electrical Characteristics and Operating Conditions (H version)
V
Notes: 1, 5, 6; please refer to the 256Mb: x32 Mobile SDRAM data sheet for all notes.
I
V
Notes: 1, 5, 6, 11, 13; please refer to the 256Mb: x32 Mobile SDRAM data sheet for all notes.
DD
DD
DD
IN
= +1.8V ±0.1V V
Specifications and Conditions (LC version)
= +3.3V ±0.3V, V
≤ V
t
RCD met; No accesses in progress
DD
OUT
OUT
= 4mA)
= -4mA)
DD
DD
Q = +1.8V ±0.1V
Q = +3.3V ±0.3V
t
(MIN)
t
RFC =
RFC = 7.8µs
OUT
t
RFC
≤
512Mb : x32 TwinDie Mobile SDRAM Addendum
V
Symbol
6
DD
Symbol
V
V
I
I
V
V
I
/V
I
DD
DD
I
OZ
I
DD
DD
OH
I
I
I
OL
I
IH
IL
I
DD
DD
DD
DD1
I
DD
ZZ
2NS
3NS
2N
3N
4
5
6
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.8 x V
0.9 x VDDQ
MIN
-0.3
-1.0
-1.5
1.7
–
210
800
165
300
5.0
60
80
60
20
-8
DD
Q
MAX
-10
185
800
140
250
V
5.0
60
80
60
20
Electrical Specifications
DD
MAX
1.55
Q + 0.3
1.9
0.3
1.0
0.2
–
©2004 Micron Technology, Inc. All rights reserved.
Units
mA
mA
mA
mA
mA
mA
mA
µA
µA
Units
µA
µA
V
V
V
V
V
3, 12, 18, 19,
3, 18, 19, 28
3, 12, 19, 28
3, 18, 19, 28
Notes
28, 29
32
Notes
22
22