BF1108 NXP Semiconductors, BF1108 Datasheet

Depletion type Field-Effect Transistor and band-switching diode in a SOT143B package

BF1108

Manufacturer Part Number
BF1108
Description
Depletion type Field-Effect Transistor and band-switching diode in a SOT143B package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1108

Configuration
Single Dual Gate
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant

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1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
I
I
Table 1.
[1]
Symbol
L
ISL
R
V
ins(on)
GS(p)
DSon
BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008
Specially designed for low loss RF switching up to 1 GHz
Various RF switching applications such as:
off
I
N
N
F
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
= diode forward current.
Passive loop through for VCR tuner
Transceiver switching
Quick reference data
Parameter
on-state insertion loss R
off-state isolation
drain-source on-state
resistance
gate-source pinch-off
voltage
Conditions
V
R
V
V
V
SK
SK
KS
DS
S
S
= R
= R
= V
= V
= 0 V; I
= 1 V; I
L
L
DK
DK
= 50 ; f
= 50 ; f
= 0 V; I
= 5 V; I
D
D
= 1 mA
= 20 A
F
F
= 0 mA
= 1 mA
1 GHz;
1 GHz;
[1]
Min
-
30
-
-
Product data sheet
Typ
-
-
12
3
Max
2
-
20
4
Unit
dB
dB
V

Related parts for BF1108

BF1108 Summary of contents

Page 1

... General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BF1108 (SOT143B BF1108R (SOT143R [1] Drain and source are interchangeable. 3. Ordering information Table 3. Type number BF1108 BF1108R 4. Marking Table 4. Type number BF1108 BF1108R BF1108_BF1108R_4 Product data sheet Pinning Description FET gate; diode anode diode cathode source drain FET gate ...

Page 3

... Thermal characteristics Parameter thermal resistance from junction to solder point Static characteristics Conditions gate-source breakdown V voltage gate-source pinch-off voltage V drain cut-off current V gate leakage current V drain-source on-state V resistance forward voltage I reverse current V V Rev. 04 — 29 May 2008 BF1108; BF1108R Silicon RF switches Conditions [1] Min = 0 ...

Page 4

... C. amb Conditions on-state insertion loss off-state isolation drain-source on-state resistance input capacitance MHz output capacitance MHz diode capacitance MHz; V diode forward resistance mA 100 MHz F and Rev. 04 — 29 May 2008 BF1108; BF1108R Silicon RF switches Min [ GHz - GHz - GHz - GHz GHz - GHz [ ...

Page 5

... BF1108_BF1108R_4 Product data sheet mgs357 ISL off 800 1200 f (MHz (diode F Figure 3. Fig 2. Off-state isolation as a function of frequency BF1108/BF1108R 50 input Rev. 04 — 29 May 2008 BF1108; BF1108R Silicon RF switches 400 800 forward current). Measured in test circuit see Figure typical values 1 nF ...

Page 6

... Product data sheet scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA Rev. 04 — 29 May 2008 BF1108; BF1108R Silicon RF switches detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B X c ISSUE DATE 04-11-16 06-03-16 © ...

Page 7

... BF1108_BF1108R_4 Product data sheet scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA SC-61AA Rev. 04 — 29 May 2008 BF1108; BF1108R Silicon RF switches detail 2.5 0.55 0.45 0.2 0.1 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R ISSUE DATE 04-11-16 06-03-16 © ...

Page 8

... Legal texts have been adapted to the new company name where appropriate. • Symbol notation has been adapted to comply with the current guidelines of NXP Semiconductors. Product data sheet Product data sheet Preliminary specification Rev. 04 — 29 May 2008 BF1108; BF1108R Silicon RF switches Change notice Supersedes - BF1108_1108R_3 - BF1108_1108R_2 - ...

Page 9

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 29 May 2008 BF1108; BF1108R Silicon RF switches © NXP B.V. 2008. All rights reserved ...

Page 10

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BF1108_BF1108R_4 Silicon RF switches All rights reserved. Date of release: 29 May 2008 ...

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