BAR6702VH6327XT Infineon Technologies, BAR6702VH6327XT Datasheet
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BAR6702VH6327XT
Specifications of BAR6702VH6327XT
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BAR6702VH6327XT Summary of contents
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Silicon PIN Diode For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.25 pF) Low forward resistance (typ. 1.5 Low harmonics Pb-free (RoHS compliant) package Qualified according AEC ...
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Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current V = 100 V R Forward voltage Characteristics Diode capacitance MHz ...
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Diode capacitance Parameter 0.5 F 0.4 1 MHz 100 MHz 0.35 1 GHz 1.8 GHz 0.3 0.25 0.2 0.15 0 Forward resistance 100MHz 3 ...
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Forward current BAR67-02V 250 mA 200 175 150 125 100 Permissible Puls Load R thJS BAR67-02V D=0.5 0 ...
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Permissible Puls Load R thJS BAR67- K 0.5 0.2 0.1 0.05 0. 0.01 0.005 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel Standard 4 0.4 Cathode marking 0.93 Package SC79 0.2 M ...
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Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 Month ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...