MCP4018T-502E/LT Microchip Technology, MCP4018T-502E/LT Datasheet - Page 4
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MCP4018T-502E/LT
Manufacturer Part Number
MCP4018T-502E/LT
Description
IC DGTL POT 5K 128TAPS SC70-6
Manufacturer
Microchip Technology
Datasheet
1.MCP4018T-502ELT.pdf
(66 pages)
Specifications of MCP4018T-502E/LT
Taps
128
Resistance (ohms)
5K
Number Of Circuits
1
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Volatile
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Resistance In Ohms
5K
End To End Resistance
5kohm
Track Taper
Logarithmic
No. Of Steps
128
Resistance Tolerance
± 20%
Supply Voltage Range
1.8V To 5.5V
Control Interface
I2C
No. Of Pots
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MCP4018T-502E/LTTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP4018T-502E/LT
Manufacturer:
Freescale
Quantity:
176
Part Number:
MCP4018T-502E/LT
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP4017/18/19
AC/DC CHARACTERISTICS
DS22147A-page 4
DC Characteristics
Supply Voltage
V
to ensure Wiper
Reset
V
ensure Power-on
Reset
Delay after device
exits the reset
state
(V
Supply Current
(Note 8)
Note 1:
DD
DD
DD
Parameters
Start Voltage
Rise Rate to
> V
2:
3:
4:
5:
6:
7:
8:
BOR
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP4018 device only, includes V
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
POR/BOR is not rate dependent.
Supply current is independent of current through the resistor network
)
V
T
V
Sym
V
BORD
DDRR
I
BOR
DD
DD
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
Min
2.7
1.8
—
—
—
—
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
W
(Note 7)
WZSE
with V
Typ
2.5
10
45
—
—
—
and V
A
= V
1.65
WFSE
Max
DD
5.5
5.5
20
80
W
5
), which changes significantly over voltage and
and V
.
–40°C ≤ T
Units
V/ms
B
µS
µA
µA
V
V
V
= V
SS
.
A
Analog Characteristics specified
Digital Characteristics specified
RAM retention voltage (V
Serial Interface Active,
Write all 0’s to Volatile Wiper
V
Serial Interface Inactive,
(Stop condition, SCL = SDA = V
Wiper = 0, V
DD
≤ +125°C (extended)
DD
= 5.5V, F
= 5.5V, T
DD
© 2009 Microchip Technology Inc.
SCL
Conditions
= 5.5V
A
= 400 kHz
= +25°C.
RAM
) < V
IH
),
BOR