M48T35Y-70MH1E STMicroelectronics, M48T35Y-70MH1E Datasheet - Page 16
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M48T35Y-70MH1E
Manufacturer Part Number
M48T35Y-70MH1E
Description
IC TIMEKPR NVRAM 256KBIT5V 28SOI
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheet
1.M48T35Y-70MH1E.pdf
(28 pages)
Specifications of M48T35Y-70MH1E
Memory Size
256K (32K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Function
Clock/Calendar/NV Timekeeping RAM/Watchdog Timer/Battery Backup
Rtc Memory Size
32768 Byte
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Rtc Bus Interface
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2849-5
M48T35Y-70MH1
M48T35Y-70MH1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M48T35Y-70MH1E
Manufacturer:
ST
Quantity:
2 848
Clock operations
3.6
16/28
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
10) is recommended in order to provide the needed filtering.
CC
to V
SS
Doc ID 2611 Rev 9
V CC
(cathode connected to V
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
CC
CC
DEVICE
, anode to V
bus. The energy stored in the
SS
SS
M48T35, M48T35Y
by as much as
). Schottky diode
AI02169