NB3N3002DTR2G ON Semiconductor, NB3N3002DTR2G Datasheet - Page 3

• Manufacturer Part Number: NB3N3002DTR2G
• Description: IC CLK GEN XTAL-HCSL 16-TSSOP
• Manufacturer: ON Semiconductor
• Type: Clock Generatorr

Specifications of NB3N3002DTR2G

• Pll: Yes
• Input: Crystal
• Output: HCSL
• Number Of Circuits: 1
• Ratio - Input:output: 1:1
• Differential - Input:output: No/Yes
• Frequency - Max: 200MHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 200MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
4. NB3N circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit
5. Measurement taken with outputs terminated with R
Table 4. MAXIMUM RATINGS
Table 5. DC CHARACTERISTICS
Symbol
V
V
T
T
q
q
T
I
I
V
V
V
V
V
DV
Symbol
DD
DDOE
A
stg
JA
JC
sol
DD
I
IH
IL
OH
OL
cross
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
from I
cross
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
REF
Positive Power Supply
Input Voltage (V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Wave Solder
(Pin 9) to GND of 475 W. See Figure 3.
Power Supply Current (Note 4)
Power Supply Current when OE is Set Low
Input HIGH Voltage (X1/CLK, Sel0, Sel1,and OE)
Input LOW Voltage (X1/CLK, Sel0, Sel1, and OE)
Output HIGH Voltage (See Figure 4)
Output LOW Voltage (See Figure 4)
Crossing Voltage Magnitude (Absolute)
Change in Magnitude of V
Table 3. ATTRIBUTES
1. For additional information, see Application Note AND8003/D.
ESD Protection
Moisture Sensitivity, Indefinite Time Out of Dray Pack (Note 1)
Flammability Rating
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
IN
Parameter
)
(Note 2)
cross
(V
Characteristic
DD
= 3.3 V ±5%, GND = 0 V, T
Characteristic
S
= 33.2 W, R
http://onsemi.com
Oxygen Index: 28 to 34
Condition 1
GND = 0 V
GND = 0 V
500 lfpm
(Note 3)
L
0 lfpm
Human Body Model
= 49.9 W, with load capacitance of 2 pF and current biasing resistor, R
3
A
= −40°C to +85°C)
GND v V
Condition 2
TSSOP–16
TSSOP–16
TSSOP−16
GND − 300
0.7 * V
−150
Min
660
250
UL 94 V−0 @ 0.125 in
65
35
I
v V
DD
Level 1
DD
> 2 kV
Value
7623
Typ
700
−0.5 V to V
0
−65 to +150
−40 to +85
33 to 36
Rating
138
108
265
4.6
V
0.3* V
DD
DD
Max
850
150
400
150
+0.5 V
95
65
+ 300
DD
Units
°C/W
°C/W
°C/W
Unit
mA
mA
mV
mV
mV
mV
mV
mV
°C
°C
°C
V
V
REF
,