ML610Q422-NNNTBZ03A7 Rohm Semiconductor, ML610Q422-NNNTBZ03A7 Datasheet - Page 24

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ML610Q422-NNNTBZ03A7

Manufacturer Part Number
ML610Q422-NNNTBZ03A7
Description
MCU 8BIT 32K FLASH 22CH 120-TQFP
Manufacturer
Rohm Semiconductor
Series
-r

Specifications of ML610Q422-NNNTBZ03A7

Core Processor
nX-U8/100
Core Size
8-Bit
Speed
4.2MHz
Connectivity
I²C, SSP, UART/USART
Peripherals
LCD, Melody Driver, POR, PWM, WDT
Number Of I /o
14
Program Memory Size
32KB (16K x 16)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.1 V ~ 3.6 V
Data Converters
A/D 2x12b, 2x24b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 70°C
Package / Case
100-TFQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ML610Q422-NNNTBZ03A7
Manufacturer:
ROHM
Quantity:
1 001
Part Number:
ML610Q422-NNNTBZ03A7
Manufacturer:
Rohm Semiconductor
Quantity:
10 000
DC CHARACTERISTICS (4/5)
OKI SEMICONDUCTOR
*
*
*
*
*
Output voltage 1
(P20–P22/2
function is
selected)
(P30–P36)
(P40–P47)
(PA0–PA7)
Output voltage 2
(P20–P22/2
function is Not
selected)
Output voltage 3
(P40–P41)
Output voltage 4
(COM0–15)
(SEG0–49)
Output leakage
(P20–P22)
(P30–P35)
(P40–P47)
(PA0–PA7)
(V
1
2
3
4
5
: When the CPU operating rate is 100% (No HALT state).
: All SEGs: off waveform, No LCD panel load, 1/3 bias, 1/3 duty, Frame frequency: Approx. 64 Hz, Bias voltage multiplying
: Use 32.768KHz Crystal Oscillator C-001R (Epson Toyocom) with capacitance C
: Use 4.096MHz Crystal Oscillator CHC49SFWB (Kyocera).
: Significant bits of BLKCON0~BLKCON4 registers are all “1”.
DD
clock: 1/128 LSCLK (256Hz)
Parameter
= 1.1 to 3.6V, AV
*1
*1
nd
nd
VOMH4S
VOML4S
VOMH4
VOM4S
VOML4
Symbol
VOM4
VOH1
VOH2
VOH4
VOL1
VOL2
VOL3
VOL4
IOOH
DD
IOOL
= 2.2 to 3.6V, V
PLL: In oscillating state. *
A/D: In operating state.
LCD/BIAS circuits: Operating. *
V
DD
VOH = V
VOL = V
= AV
IOL1 = +0.03mA, V
IOH1 = -0.03mA, V
IOH1 = -0.03mA, V
IOH1 = −0.5mA, V
IOH1 = −0.5mA, V
IOH1 = -0.1mA, V
IOL1 = +0.5mA, V
IOL1 = +0.1mA, V
IOH1 = -0.1mA, V
IOL2 = +5mA, V
IOL3 = +3mA, V
IOMH4S = −0.2mA, VL1=1.2V
IOML4S = −0.2mA, VL1=1.2V
IOMH4 = +0.2mA, VL1=1.2V
IOM4S = −0.2mA, VL1=1.2V
IOML4 = +0.2mA, VL1=1.2V
(when I
IOM4 = +0.2mA, VL1=1.2V
DD
IOH4 = −0.2mA, VL1=1.2V
IOL4 = +0.2mA, VL1=1.2V
SS
= 3.0V
SS
DD
= AV
(in high-impedance state)
(in high-impedance state)
2
C mode is selected)
Condition
SS
= 0V, Ta = −20 to +70°C, Ta = −40 to +85°C for P version, unless otherwise
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
3
= 1.8 to 3.6V
= 2.0 to 3.6V
*
= 1.3 to 3.6V
= 1.3 to 3.6V
= 1.8 to 3.6V
= 1.3 to 3.6V
= 1.8 to 3.6V
= 1.8 to 3.6V
4
= 1.1 to 3.6V
= 1.1 to 3.6V
= 1.1 to 3.6V
2
Ta = -20
to +70°C
Ta = -40
to +85°C
−0.5
−0.3
−0.3
−0.5
−0.3
−0.3
−0.2
−0.2
−0.2
−0.2
Min.
V
V
V
V
V
V
V
V
V
V
−1
DD
DD
DD
DD
DD
DD
L4
L3
L2
L1
GL
Rating
Typ.
/C
DL
=0pF.
Max.
+0.2
+0.2
+0.2
0.5
0.5
0.3
0.5
0.4
V
V
V
0.2
2.5
2.5
1
L3
L2
L1
ML610Q421/ML610Q422
Unit
μA
V
FEDL610Q421-01
specified) (4/5)
Measuring
circuit
2
3
24/35

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