IXFB132N50P3 IXYS, IXFB132N50P3 Datasheet - Page 4

• Manufacturer Part Number: IXFB132N50P3
• Description: MOSFET N-CH 500V 132A PLUS264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFB132N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 132A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 18600pF @ 25V
• Power - Max: 1890W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 132
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 18600
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1890
• Rthjc, Max, (ºc/w): 0.066
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
100
200
180
160
140
120
100
50
10
80
60
40
20
0
1
0
0.2
3.5
0
f
0.3
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
4.0
5
0.4
0.5
10
4.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
15
5.0
T
J
0.7
= 125ºC
V
V
V
SD
DS
GS
0.8
20
5.5
- Volts
- Volts
- Volts
T
J
= 125ºC
0.9
- 40ºC
25ºC
T
6.0
25
J
= 25ºC
1.0
C oss
C iss
C rss
1.1
6.5
30
1.2
7.0
35
1.3
7.5
1.4
40
1000
200
180
160
140
120
100
100
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
1
10
0
0
V
I
I
T
T
Single Pulse
20
D
G
DS
J
C
R
= 66A
= 10mA
= 150ºC
DS(on)
= 25ºC
= 250V
Fig. 12. Forward-Bias Safe Operating Area
40
50
Limit
60
Fig. 8. Transconductance
Fig. 10. Gate Charge
80
Q
100
G
- NanoCoulombs
I
D
V
100
IXFB132N50P3
- Amperes
DS
100
- Volts
120
T
150
J
= - 40ºC
140
125ºC
25ºC
160
200
180
100µs
1ms
200
1,000
250
220