IXFB132N50P3 IXYS, IXFB132N50P3 Datasheet - Page 3

• Manufacturer Part Number: IXFB132N50P3
• Description: MOSFET N-CH 500V 132A PLUS264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFB132N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 132A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 18600pF @ 25V
• Power - Max: 1890W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 132
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 18600
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1890
• Rthjc, Max, (ºc/w): 0.066
• Package Style: PLUS264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
140
120
100
140
120
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
80
60
40
20
80
60
40
20
0
0
0
0
0
V
GS
Fig. 5. R
= 10V
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
2
1
50
DS(on)
4
2
Normalized to I
Drain Current
100
I
V
6
D
V
DS
- Amperes
DS
- Volts
- Volts
3
V
GS
= 10V
8
V
150
8V
7V
GS
D
= 10V
= 66A Value vs.
8V
4
T
6V
4V
5V
J
7V
6V
5V
= 125ºC
10
J
J
= 25ºC
= 125ºC
200
5
12
T
J
= 25ºC
250
14
6
250
200
150
100
140
120
100
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
50
80
60
40
20
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
= 10V
-25
-25
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
V
GS
= 10V
Junction Temperature
8V
T
Case Temperature
T
Normalized to I
C
J
25
25
- Degrees Centigrade
- Degrees Centigrade
10
7V
6V
5V
V
IXFB132N50P3
DS
50
50
- Volts
15
I
D
75
75
D
= 66A Value vs.
= 132A
100
100
20
I
J
D
= 25ºC
= 66A
125
125
150
150
25