IXFH42N60P3 IXYS, IXFH42N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFH42N60P3
• Description: MOSFET N-CH 600V 42A TO247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFH42N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 25V
• Power - Max: 830W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 42
• Rds(on), Max, Tj=25°c, (?): 0.185
• Ciss, Typ, (pf): 5150
• Qg, Typ, (nc): 78
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
120
100
10
70
60
50
40
30
20
10
80
60
40
20
1
0
0
3.5
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
4.0
0.5
10
4.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
T
15
J
= 125ºC
5.0
V
0.7
V
V
DS
SD
GS
T
- Volts
20
- Volts
J
- Volts
= 125ºC
0.8
- 40ºC
25ºC
5.5
25
T
0.9
J
C oss
C rss
C iss
= 25ºC
6.0
30
1.0
6.5
35
1.1
1.2
7.0
40
100
10
1
10
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
10
0
0
R
DS(on)
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
V
I
I
D
G
DS
Limit
10
= 21A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
10
= 300V
20
20
Fig. 8. Transconductance
Fig. 10. Gate Charge
30
Q
G
V
30
- NanoCoulombs
I
D
DS
IXFH42N60P3
- Amperes
100
- Volts
40
40
50
50
60
T
J
= - 40ºC
125ºC
25ºC
60
70
100µs
1ms
1,000
70
80