IXFH42N60P3 IXYS, IXFH42N60P3 Datasheet - Page 3

• Manufacturer Part Number: IXFH42N60P3
• Description: MOSFET N-CH 600V 42A TO247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFH42N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 25V
• Power - Max: 830W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 42
• Rds(on), Max, Tj=25°c, (?): 0.185
• Ciss, Typ, (pf): 5150
• Qg, Typ, (nc): 78
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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3.0
2.6
2.2
1.8
1.4
1.0
0.6
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
5
0
5
0
0
0
0
V
GS
2
1
Fig. 5. R
= 10V
10
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
4
2
20
6
DS(on)
3
8
Normalized to I
30
Drain Current
10
4
I
V
D
V
DS
DS
- Amperes
- Volts
12
40
- Volts
5
V
GS
14
= 10V
V
7V
D
T
50
GS
6
J
= 21A Value vs.
= 125ºC
16
= 10V
7V
6V
4V
5V
J
7
18
60
J
= 125ºC
6V
5V
= 25ºC
T
20
J
8
= 25ºC
70
22
9
24
80
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
70
60
50
40
30
20
10
45
40
35
30
25
20
15
10
0
5
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
Fig. 4. R
= 10V
-25
-25
5
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
Junction Temperature
10
T
T
Case Temperature
Normalized to I
C
J
25
25
- Degrees Centigrade
- Degrees Centigrade
V
DS
IXFH42N60P3
15
50
50
- Volts
V
GS
= 10V
7V
6V
5V
75
75
D
= 21A Value vs.
20
I
D
= 42A
100
100
J
25
= 25ºC
125
125
I
D
= 21A
150
150
30