STP260N6F6 STMicroelectronics, STP260N6F6 Datasheet - Page 5

• Manufacturer Part Number: STP260N6F6
• Description: MOSFET N-CH 75V 120A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP260N6F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 183nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 300W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11230-5

STI260N6F6, STP260N6F6
Table 7.
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17467 Rev 3
I
I
di/dt = 100 A/µs,
T
(see Figure 15)
SD
SD
j
= 150 °C
Test conditions
= 120 A, V
= 120 A, V
GS
DD
= 48 V
= 0
Electrical characteristics
Min.
-
-
-
-
Typ.
55.6
116
3.8
Max
120
480
1.1
Unit
nC
ns
A
A
V
A
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