STL26NM60N STMicroelectronics, STL26NM60N Datasheet - Page 3

• Manufacturer Part Number: STL26NM60N
• Description: MOSFET N-CH 600V 19A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 125mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11207-2

STL26NM60N
1
Electrical ratings
Table 2.
1. The value is rated according to R
2. When mounted on FR-4 board of inch², 2oz Cu
3. I
Table 3.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
R
I
Symbol
Symbol
P
dv/dt
R
DM
P
thj-amb
I
I
TOT
thj-case
V
I
I
TOT
V
E
T
D
D
I
SD
D
D
AR
T
(2),(3)
GS
DS
AS
stg
(2)
(2)
(1)
(1)
j
(1)
(3)
(3)
≤ 19 A, di/dt ≤ 400 A/µs, V
(1)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-amb max
Absolute maximum ratings
Thermal data
j
= 25 °C, I
Parameter
Parameter
C
C
D
thj-case
Doc ID 18472 Rev 1
DS peak
= 25 °C (steady state)
= 25 °C (steady state)
= I
GS
AR
= 0)
, V
≤ V
(BR)DSS
DD
C
C
C
C
= 25 °C
= 100 °C
= 25 °C
= 100 °C
= 50 V)
j
max)
, V
DD
= 80% V
(BR)DSS
- 55 to 150
Value
Value
± 25
10.8
0.83
600
125
400
150
2.7
1.7
7.5
19
12
15
45
3
Electrical ratings
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
A
A
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