STH260N6F6-2 STMicroelectronics, STH260N6F6-2 Datasheet
STH260N6F6-2
Specifications of STH260N6F6-2
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STH260N6F6-2 Summary of contents
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... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STripFET™ DeepGATE™ VI Power MOSFET max I DS(on) D < 0.002 Ω 180 A < 0.003 Ω 120 A Figure 1. Marking 260N6F6 260N6F6 Doc ID 17467 Rev 1 STH260N6F6-2 STP260N6F6 Preliminary data PAK-2 TO-220 Internal schematic diagram Package Packaging 2 H PAK-2 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 17467 Rev 1 STH260N6F6-2, STP260N6F6 ...
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... STH260N6F6-2, STP260N6F6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) E Single pulse avalanche energy AS T Storage temperature stg T Operating junction temperature j 1 ...
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... For H PAK For TO-220 Parameter Test conditions MHz (see Figure 3) Parameter Test conditions 4.7 Ω (see Figure 2) Doc ID 17467 Rev 1 STH260N6F6-2, STP260N6F6 Min. Typ =125 ° 250 µ 1 2 Min. Typ. 10500 - 780 440 150 = 120 TBD TBD Min. Typ. TBD - = 60 A ...
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... STH260N6F6-2, STP260N6F6 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Current limited by package. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% ...
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... AM01470v1 Figure 7. V (BR)DSS 10% 0 AM01472v1 Doc ID 17467 Rev 1 STH260N6F6-2, STP260N6F6 Gate charge test circuit 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ Unclamped inductive load test circuit 2200 3.3 μ ...
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... STH260N6F6-2, STP260N6F6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17467 Rev 1 Package mechanical data ® ...
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... H F (x2 Doc ID 17467 Rev 1 STH260N6F6-2, STP260N6F6 mm Typ. Max. 4.80 0.20 1.37 5.18 0.90 0.85 10.40 7.971 15.80 1.40 5.23 7.85 1.7 2.9 0.60 8° 0.25 Gouge Plane ...
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... STH260N6F6-2, STP260N6F6 Figure 9. H²PAK2 recommended footprint (dimension in mm) Doc ID 17467 Rev 1 Package mechanical data 8159712_B 9/12 ...
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... Doc ID 17467 Rev 1 STH260N6F6-2, STP260N6F6 inch Min Typ Max 0.173 0.181 0.024 0.034 0.044 0.066 0.019 0.027 0.6 0.62 0.050 0.393 0.409 0.094 0.106 0.194 ...
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... STH260N6F6-2, STP260N6F6 5 Revision history Table 9. Document revision history Date 07-May-2010 Revision 1 First release. Doc ID 17467 Rev 1 Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17467 Rev 1 STH260N6F6-2, STP260N6F6 ...