STH180N10F3-2 STMicroelectronics, STH180N10F3-2 Datasheet - Page 3

• Manufacturer Part Number: STH180N10F3-2
• Description: MOSFET N-CH 100V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STH180N10F3-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 6665pF @ 25V
• Power - Max: 315W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11216-2

STH180N10F3-2, STP180N10F3
1
Electrical ratings
Table 2.
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj = 25 °C, I
Table 3.
1. When mounted on FR-4 board, on 1inch², 2oz Cu.
Rthj-pcb
Rthj-case
Symbol
Symbol
E
I
Rthj-a
DM
P
dv/dt
I
I
V
V
T
AS
D
D
TOT
T
T
GS
DS
stg
(1)
(1)
j
l
(2)
(3)
(1)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
storage temperature
Thermal data
Thermal resistance junction-case
Thermal resistance junction-ambient
max
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
Absolute maximum ratings
D
= 80 A, V
Parameter
Parameter
DD
Doc ID 14933 Rev 3
C
= 50 V.
= 25°C
GS
=0)
C
C
=100°C
= 25°C
TO-220
TO-220
120
110
480
62.5
300
- 55 to 175
Value
± 20
100
315
350
0.48
2.1
20
H²PAK
H²PAK
180
120
720
Electrical ratings
35
W/°C
°C/W
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
W
°C
V
V
A
A
A
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