STL35N15F3 STMicroelectronics, STL35N15F3 Datasheet
STL35N15F3
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STL35N15F3 Summary of contents
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... Table 1. Device summary Order code STL35N15F3 March 2011 STripFET™ III Power MOSFET R DS(on max < 0.0355 Ω ( Figure 1. Marking L35N15F3 PowerFLAT™ (5x6) Doc ID 018598 Rev 1 STL35N15F3 PowerFLAT™(5x6) Internal schematic diagram Package Packaging Tape and reel 1/11 www.st.com 11 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/ Doc ID 018598 Rev 1 STL35N15F3 ...
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... STL35N15F3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (2) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (2) P Total dissipation at T TOT T Operating junction temperature ...
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... V, f=1 MHz = = Figure 14 f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Parameter Test conditions V = 4.7 Ω Figure 13 Doc ID 018598 Rev 1 STL35N15F3 Min. Typ 150 GS = 250 µ 3.5 A 0.0355 D Min. Typ. Max. 1905 - 171 49.4 - 7.3 22.6 - 1.7 Min. ...
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... STL35N15F3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% ...
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... Figure 3. AM09040v1 Tj=150°C Tc=25°C Single pulse 10ms 100ms 1s V (V) 100 DS Figure 5. AM09041v1 temperature Figure 7. AM09043v1 R DS(on) (mΩ (°C) 125 J Doc ID 018598 Rev 1 STL35N15F3 Thermal impedance Transfer characteristics V = Static drain-source on resistance V =10V AM09042v1 V (V) GS AM09044v1 I (A) D ...
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... STL35N15F3 Figure 8. Gate charge vs gate-source voltage Figure (V) V =75V = Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1 1.0 0.9 0.8 0.7 0.6 0.5 - Figure 12. Source-drain diode forward characteristics V SD (V) 0.9 0.8 0.7 0.6 0.5 0.4 0 AM09045v1 1000 60 Q (nC) g Figure 11. Normalized on resistance vs ...
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... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 018598 Rev 1 STL35N15F3 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...
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... STL35N15F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 018598 Rev 1 Package mechanical data ® 9/11 ...
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... Revision history 5 Revision history Table 8. Document revision history Date 16-Mar-2011 10/11 Revision 1 Initial release. Doc ID 018598 Rev 1 STL35N15F3 Changes ...
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... STL35N15F3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...