STD96N3LLH6 STMicroelectronics, STD96N3LLH6 Datasheet - Page 3

• Manufacturer Part Number: STD96N3LLH6
• Description: MOSFET N-CH 30V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD96N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11214-2

STD96N3LLH6
1
Electrical ratings
Table 2.
1. Limited by wire bonding.
2. Pulse width limited by safe operating area.
3. Starting Tj = 25°C, I
Table 3.
1. When mounted on FR-4 board of 1 inch
R
Symbol
Symbol
R
R
E
thj-pcb
I
P
thj-case
DM
thj-amb
I
V
V
T
D
AS
T
I
TOT
T
DS
GS
stg
D
(1)
l
j
(2)
(3)
(1)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
AV
= 55 A, L = 0.1 mH
Parameter
Parameter
Doc ID 18432 Rev 1
C
= 25 °C
GS
2
= 0)
, 2 oz Cu.
C
C
= 25 °C
= 100 °C
-55 to 175
Value
Value
± 20
0.47
320
150
175
2.14
275
100
30
80
61
70
35
Electrical ratings
W/°C
°C/W
°C/W
°C/W
Unit
Unit
mJ
°C
°C
°C
W
V
V
A
A
A
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