CMF10120D Cree Inc, CMF10120D Datasheet - Page 6

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Package Dimensions
Package TO-247-3
6
G
G
G
CMF10120D Rev. -
Fig 15. Avalanche Test Circuit
S
S
D
D
D
S
Fig 16. Theoretical Avalanche Waveform
E
POS
A
D1
D2
A1
A2
b1
b2
b3
b4
E1
E2
E3
E4
L1
ØP
Q
A
b
D
E
e
N
S
c
L
= 1/2L x I
.190
.090
.075
.042
.075
.075
.113
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
.780
.161
.138
.216
.238
Min
.214 BSC
Inches
3
D
Max
.205
.100
.085
.052
.095
.085
.133
.123
.027
.831
.695
.049
.635
.557
.201
.075
.529
.800
.173
.144
.236
.248
2
20.80
16.25
15.75
13.10
12.38
19.81
4.83
2.29
1.91
1.07
1.91
1.91
2.87
2.87
0.55
0.95
3.68
1.00
4.10
3.51
5.49
6.04
Min
Millimeters
5.44 BSC
3
21.10
17.65
16.13
14.15
13.43
20.32
Max
5.21
2.54
2.16
1.33
2.41
2.16
3.38
3.13
0.68
1.25
5.10
1.90
4.40
3.65
6.00
6.30