FZ1800R12KF4 Infineon Technologies, FZ1800R12KF4 Datasheet - Page 3

• Manufacturer Part Number: FZ1800R12KF4
• Description: IGBT Modules N-CH 1.2KV 1.8KA
• Manufacturer: Infineon Technologies

Specifications of FZ1800R12KF4

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 1800 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 1,800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Standard
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

i
i
i
C
C
F
4000
3000
2000
1000
4000
3000
2000
1000
4000
3000
2000
1000
[A]
[A]
[A]
0
0
0
0,5
1
5
FZ 1800 R 12 KF4
Bild / Fig. 1
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
V
- - - - t
____ t
FZ 1800 R 12 KF4
Bild / Fig. 3
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
V
FZ 1800 R 12 KF4
Bild / Fig. 5
Durchlaßkennlinie der Inversdiode (typisch)
Forward charakteristic of the inverse diode (typical)
----- t
___ t
GE
CE
= 20V
= 15V
vj
vj
vj
vj
= 25°C
= 125°C
= 125°C
= 25°C
6
1,0
2
7
1,5
8
3
9
2,0
125°C
25°C
t
vj
=
10
4
v
v
v
CE
GE
F
2,5
[V]
[V]
[V]
11 11
12
3,0
5
i
Z
[°C/W]
C
(th)JC
4000
3000
2000
1000
10
10
10
[A]
-1
-2
-3
0
8
6
4
2
8
6
4
2
10
1
FZ 1800 R 12 KF4
Bild / Fig. 2
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
t
FZ 1800 R 12 KF4
Bild / Fig. 4
Transienter innerer Wärmewiderstand (DC)
Transient thermal impedance (DC)
vj
-3
= 125°C
2
4
6
10
2
-2
2
4
6
10
3
-1
2
FZ 1800 R 12 KF4
4
6
V
GE
10
4
v
CE
=20V
0
[V]
t [s]
2
Diode
IGBT
4
15V
12V
10V
6
9V
8V
10
5
1