IS41LV16256B-35K ISSI, Integrated Silicon Solution Inc, IS41LV16256B-35K Datasheet
IS41LV16256B-35K
Specifications of IS41LV16256B-35K
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IS41LV16256B-35K Summary of contents
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... Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16256B ideal for use in 16 and 32-bit wide data bus systems. These features make the IS41LV16256B ideally suited for high band-width graphics, digital signal processing, high- performance computing systems, and peripheral applications ...
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... IS41LV16256B FUNCTIONAL BLOCK DIAGRAM OE WE CAS LCAS CLOCK UCAS GENERATOR RAS RAS CLOCK GENERATOR REFRESH COUNTER ADDRESS BUFFERS A0- CONTROL CAS WE LOGICS DATA I/O BUS COLUMN DECODERS SENSE AMPLIFIERS MEMORY ARRAY 262,144 x 16 Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI OE CONTROL LOGIC I/O0-I/O15 Rev ...
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... IS41LV16256B TRUTH TABLE Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) Read-Write (1,2) EDO Page-Mode Read (2) 1st Cycle: 2nd Cycle: Any Cycle: EDO Page-Mode Write ...
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... IS41LV16256B Functional Description The IS41LV16256B is a CMOS DRAM optimized for high- speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 18 address bits. These are entered nine bits (A0-A8 time. The row address is latched by the Row Address Strobe (RAS) ...
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... IS41LV16256B ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Voltage on Any Pin Relative to GND T V Supply Voltage DD I Output Current OUT P Power Dissipation D T Commercial Operation Temperature A T Storage Temperature STG Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...
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... IS41LV16256B ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.) Symbol Parameter I Input Leakage Current IL I Output Leakage Current IO V Output High Voltage Level OH V Output Low Voltage Level OL I Stand-by Current: TTL Stand-by Current: CMOS Operating Current (2,3,4) Random Read/Write Average Power Supply Current ...
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... IS41LV16256B AC CHARACTERISTICS (1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter t Random READ or WRITE Cycle Time RC Access Time from RAS t RAC Access Time from CAS t CAC t Access Time from Column-Address AA RAS Pulse Width t RAS RAS Precharge Time t RP CAS Pulse Width ...
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... IS41LV16256B AC CHARACTERISTICS (Continued) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter t Write Command Pulse Width WP WE Pulse Widths to Disable Outputs t WPZ Write Command to RAS Lead Time t RWL Write Command to CAS Lead Time t CWL t Write Command Setup Time WCS Data-in Hold Time (referenced to RAS) ...
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... IS41LV16256B Notes initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the (MIN) and V (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between V ...
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... IS41LV16256B READ CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE Note: is referenced from rising edge of RAS or CAS, whichever occurs last OFF RAS t CSH t RSH CAS CLCH RCD RAD RAL RAH ASC Column t RCS RAC t CAC t CLC Open OES Integrated Silicon Solution, Inc. — 1-800-379-4774 ...
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... IS41LV16256B DON'T CARE) OE EARLY WRITE CYCLE (OE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/28/ RAS t CSH t RSH CAS CLCH RCD RAD RAL RAH ASC CAH t ACH Column t CWL t RWL t WCR t t WCS WCH t WP ...
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... IS41LV16256B READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I RWC t RAS t CSH t t RCD RAD RAH ASC CAH Column t RWD t t RCS CWD t AWD RAC t CAC t CLZ Open Valid Integrated Silicon Solution, Inc. — 1-800-379-4774 ...
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... IS41LV16256B EDO-PAGE-MODE READ CYCLE RAS t CRP UCAS/LCAS t RAD t ASR ADDRESS Row t RAH WE Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the t specifications. PC Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...
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... IS41LV16256B EDO-PAGE-MODE EARLY-WRITE CYCLE RAS t CRP UCAS/LCAS t RAD t ASR ADDRESS Row t RAH WE I RASP t t CSH RCD CAS, CP CAS CLCH CLCH ACH ACH ASC CAH ASC Column Column t t CWL CWL t t WCS WCS t t WCH WCH WCR t DHR Valid Data Valid Data Integrated Silicon Solution, Inc. — ...
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... IS41LV16256B EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles) RAS t t CRP RCD UCAS/LCAS ASR t RAD t t ASC RAH ADDRESS Row t RWD t RCS WE t RAC Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both 1 ...
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... IS41LV16256B EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE) RAS t t CRP RCD UCAS/LCAS ASR RAD t t ASC RAH ADDRESS Row t RCS WE t RAC Open I RASP t CSH CAS CP CAS CAH ASC CAH Column (A) Column ( CPA t t CAC CAC t COH Valid Data (A) Valid Data (B) ...
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... IS41LV16256B AC WAVEFORMS WE WE READ CYCLE (With WE WE WE-Controlled Disable) RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE RAS RAS RAS RAS-ONLY REFRESH CYCLE (OE RAS RAS t CRP UCAS/LCAS t ASR ADDRESS Row I/O Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/28/05 t CSH t t RCD ...
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... IS41LV16256B CBR CBR CBR CBR CBR REFRESH CYCLE (Addresses RAS t RPC t CP UCAS/LCAS I/O HIDDEN REFRESH CYCLE (WE RAS t CRP UCAS/LCAS t ASR ADDRESS Row I/O OE Notes Hidden Refresh may also be performed after a Write Cycle. In this case LOW and OE = HIGH. is referenced from rising edge of RAS or CAS, whichever occurs last. ...
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... IS41LV16256B ORDERING INFORMATION : 3.3V Commercial Range +70 Speed (ns) Order Part No. 35 IS41LV16256B-35K IS41LV16256B-35KL IS41LV16256B-35T IS41LV16256B-35TL 60 IS41LV16256B-60K IS41LV16256B-60KL IS41LV16256B-60T IS41LV16256B-60TL Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/28/ Package 400-mil SOJ 400-mil SOJ, Lead-free 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free 400-mil SOJ ...
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PACKAGING INFORMATION 400-mil Plastic SOJ Package Code Millimeters Inches Symbol Min Max Min No. Leads ( 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 A2 2.08 — 0.082 B 0.38 0.51 0.015 0.020 ...
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PACKAGING INFORMATION Millimeters Inches Symbol Min Max Min No. Leads ( 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 A2 2.08 — 0.082 B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 ...
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PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II Plastic TSOP (T - Type II) (MS 25) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 24/26 A 1.20 0.0472 A1 0.05 0.15 0.002 0.0059 ...