IRL6372TRPBF International Rectifier, IRL6372TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRL6372TRPBF
• Description: DUAL N CH HEXFET POWER MOSFET, 30V, 8.1A, SOIC-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL6372TRPBF

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.014ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Resistance Drain-source Rds (on): 17.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL6372PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
1.0
10
9
8
7
6
5
4
3
2
1
0
0.001
0.2
0.01
25
100
0.1
Fig 9. Maximum Drain Current vs.
10
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Case (Bottom) Temperature
0.4
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
D = 0.50
T J = 150°C
0.10
0.02
0.20
0.05
0.01
0.6
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.8
100
T J = 25°C
1.0
0.0001
V GS = 0V
125
1.2
t 1 , Rectangular Pulse Duration (sec)
0.001
150
1.4
0.01
1000
Fig 10. Threshold Voltage vs. Temperature
100
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0.1
1
0.1
-75 -50 -25
Fig 8. Maximum Safe Operating Area
T A = 25°C
Tj = 150°C
Single Pulse
I D = 10µA
I D = 250µA
I D = 1.0mA
DC
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
V DS , Drain-to-Source Voltage (V)
1
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1.0
0
1msec
25
10
50
100µsec
75 100 125 150
10
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100
100