IRL6372TRPBF International Rectifier, IRL6372TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRL6372TRPBF
• Description: DUAL N CH HEXFET POWER MOSFET, 30V, 8.1A, SOIC-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL6372TRPBF

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.014ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Resistance Drain-source Rds (on): 17.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 3. Typical Transfer Characteristics
10000
Fig 1. Typical Output Characteristics
1000
0.01
100
100
0.1
100
0.1
10
10
10
1
1
1.0
0.1
1
T J = 150°C
C rss
C oss
C iss
1.3V
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.5
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
1
2.0
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
V DS = 15V
≤60µs PULSE WIDTH
10
2.5
10
TOP
BOTTOM
3.0
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
100
3.5
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
100
0.1
14.0
12.0
10.0
10
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
0.0
Fig 2. Typical Output Characteristics
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 8.1A
V GS = 4.5V
I D = 6.5A
V DS , Drain-to-Source Voltage (V)
1.3V
T J , Junction Temperature (°C)
5
Q G , Total Gate Charge (nC)
V DS = 24V
V DS = 15V
V DS = 6.0V
1
10
IRL6372PbF
≤ 60µs PULSE WIDTH
Tj = 150°C
15
10
20
TOP
BOTTOM
25
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
100
30
3