BSS131L6327XT Infineon Technologies, BSS131L6327XT Datasheet
BSS131L6327XT
Specifications of BSS131L6327XT
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BSS131L6327XT Summary of contents
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Type ® SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Pb-free Type Package BSS131 PG-SOT23 Yes Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous ...
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Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.2 Symbol Conditions R thJA =25 °C, unless ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 [° Safe operating area I =f =25 ° parameter limited ...
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Typ. output characteristics I =f =25 ° parameter 0 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...
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Drain-source on-state resistance =10 V DS(on -60 - [° Typ. capacitances C =f ...
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Typ. gate charge V =f =0.1 A pulsed GS gate D parameter 0 gate Rev. 2.2 14 Drain-source breakdown voltage V BR(DSS) 300 ...
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Package Outline: Footprint: Rev. 2.2 Packaging: page 8 BSS131 2009-08-18 ...
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... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...