IPB70N10SL16XT Infineon Technologies, IPB70N10SL16XT Datasheet - Page 6

• Manufacturer Part Number: IPB70N10SL16XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPB70N10SL16XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.016Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 70A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Power Dissipation: 250W
• Lead Free Status / RoHS Status: Compliant

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
DS(on)
mΩ
pF
10
10
10
110
90
80
70
60
50
40
30
20
10
0
-60
4
3
2
0
DS
SPP70N10L
= f (T
)
5
-20
D
GS
j
)
= 50 A, V
10
=0V, f=1 MHz
20
15
98%
60
typ
GS
20
= 4.5 V
100
25
30
140
°C
V
T
V
C
C
C
j
DS
iss
oss
rss
200
40
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
A
V
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
3
2
1
0
-60
3
2
1
0
0
= f (T j )
SD
SPP70N10L
)
0.4
IPP70N10SL-16, IPB70N10SL-16
-20
GS
p
0.8
= V
= 80 µs
20
DS ,
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
I
D
1.6
= 2 mA
100
IPI70N10SL-16
2
2006-02-14
140
2.4
°C
T
V
V
j
SD
max
typ
min
200
3