JANTX2N7336 International Rectifier, JANTX2N7336 Datasheet - Page 3

• Manufacturer Part Number: JANTX2N7336
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of JANTX2N7336

• Number Of Elements: 4
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 14
• Package Type: MO-036AB
• Power Dissipation: 1.4W
• Lead Free Status / RoHS Status: Not Compliant

Source-Drain Diode Ratings and Characteristics (Per Die)
Thermal Resistance (Per Die)
For footnotes, refer to the last page
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Electrical Characteristics For Each P-Channel Device
R thJC
R thJA
BV DSS
∆BV DSS /∆T J Temperature Coefficient of Breakdown
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
I S
I SM
V SD
t rr
Q RR
t on
(on)
(off)
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
-100
Min
0.67
-2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.098
Typ Max Units
200
17
90
10
85
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.75
-3.0
-5.5
200
9.0
-250
-100
1.73
°C/W
-4.0
100
-25
1.4
7.0
8.0
15
30
60
70
80
—
—
—
—
—
—
—
nC
nS
A
V
V/°C
nH
nA
nC
pF
Ω
µA
ns
@ Tj = 25°C (Unless Otherwise Specified)
V
V
S
T j = 25°C, I F = -0.75A, di/dt ≤ -100A/µs
T
j
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
= 25°C, I S = -0.75A, V GS = 0V Ã
Reference to 25°C, I D = -1.0mA
V DS > -15V, I DS = -0.5A Ã
V DS = V GS , I D = -250µA
V GS = -10V, I D = -0.75A,
V DD = -50V, I D = -0.75A,
V GS = -10V, I D = -0.75A
Test Conditions
Test Conditions
V GS = -10V, I D = -0.5A
V GS = -10V, R G = 7.5Ω
V GS = 0V, I D = -1.0mA
V DS = -80V, V GS = 0V
V GS = 0V, T J =125°C
V GS = 0V, V DS = -25V
Test Conditions
V DD ≤ -50V
V DS = -80V,
V GS = - 20V
V DS = -50V
V GS = 20V
f = 1.0MHz
.
IRFG6110
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