JANTX2N7336 International Rectifier, JANTX2N7336 Datasheet

JANTX2N7336

Manufacturer Part Number
JANTX2N7336
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of JANTX2N7336

Number Of Elements
4
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
14
Package Type
MO-036AB
Power Dissipation
1.4W
Lead Free Status / RoHS Status
Not Compliant
POWER MOSFET
THRU-HOLE (MO-036AB)
Absolute Maximum Ratings (Per Die)
Product Summary
HEXFET
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance
combined with high transconductance.
also feature all of the well-established advantages of MOSFETs,
such as voltage control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They are well-
suited for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high energy
pulse circuits, and virtually any application where high reliability
is required. The
eliminates the need for additional isolating material between the
device and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
I D @ V GS =± 10V, T C = 100°C Continuous Drain Current
I D @ V GS =± 10V, T C = 25°C Continuous Drain Current
www.irf.com
Part Number
IRFG6110
IRFG6110
P D @ T C = 25°C
®
T STG
MOSFET technology is the key to International
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
HEXFET
R
0.7Ω
1.4Ω
DS(on)
transistor’s totally isolated package
Parameter
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-0.75A
1.0A
I
D
CHANNEL
HEXFET
P
N
100V, Combination 2N-2P-CHANNEL
transistors
REF:MIL-PRF-19500/598
HEXFET
300 (0.63 in./1.6 mm from case for 10s)
N-Channel
0.011
Features:
n
n
n
n
n
n
0.14
75 Á
±20
1.0
0.6
4.0
1.4
1.0
5.5 Â
®
MOSFET TECHNOLOGY
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
JANTXV2N7336
1.3 (Typical)
-55 to 150
JANTX2N7336
P-Channel
MO-036AB
IRFG6110
0.011
-5.5 Å
-0.75
-0.75
0.14
-0.5
-3.0
±20
75 Ä
1.4
PD-90436G
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
g
1

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JANTX2N7336 Summary of contents

Page 1

... PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 MOSFET TECHNOLOGY MO-036AB Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight P-Channel Units -0. ...

Page 2

... Reverse Recovery Charge t on Forward Turn-On Time Thermal Resistance (Per Die) Parameter R thJC Junction-to-Case R thJA Junction-to-Ambient Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes, refer to the last page 2 Min Typ Max Units — 100 — — ...

Page 3

Electrical Characteristics For Each P-Channel Device Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate ...

Page 4

IRFG6110 4 N-Channel G1,G3 www.irf.com ...

Page 5

N-Channel G1,G3 10 OPERATION IN THIS AREA LIMITED (on 25° 150°C Single Pulse 0.01 0 Drain-to-Source Voltage (V) IRFG6110 1ms 10ms DC 10 100 1000 5 ...

Page 6

IRFG6110 6 N-Channel G1,G3 ≤ 1 ≤ 0 90% 10 d(on d(off) f www.irf.com ...

Page 7

D.U 20V GS 0.01 Ω Charge www.irf.com N-Channel G1,G3 15V DRIVER + ...

Page 8

IRFG6110 8 P-Channel G2,G4 www.irf.com ...

Page 9

P-Channel G2,G4 10 OPERATION IN THIS AREA LIMITED (on 25° 150°C Single Pulse 0.01 0 Drain-to-Source Voltage (V) IRFG6110 1ms 10ms DC 10 100 1000 9 ...

Page 10

IRFG6110 10 P-Channel G2,G4 ≤ 1 ≤ 0 d(on 10% 90 d(off) f www.irf.com ...

Page 11

D.U -20V GS 0.01 Ω Charge www.irf.com P-Channel G2, DRIVER 15V V (BR)DSS IRFG6110 ...

Page 12

IRFG6110 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á 25V, starting 25°C, L= 150mH, Peak 1.0A 10V Â ≤ 1.0A, di/dt ≤ ...

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