SPA11N80C3XK Infineon Technologies, SPA11N80C3XK Datasheet - Page 6

• Manufacturer Part Number: SPA11N80C3XK
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPA11N80C3XK

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.45Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220FP
• Power Dissipation: 41W
• Lead Free Status / RoHS Status: Compliant

Rev. 2.9
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
500
400
300
200
100
10
8
6
4
2
0
0
25
j
); I
gate
0
D
); I
=2.2 A; V
DD
10
D
=11 A pulsed
50
20
DD
=50 V
75
Q
30
T
gate
j
[°C]
[nC]
160 V
40
100
50
640 V
125
60
150
70
page 6
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
960
920
880
840
800
760
720
680
10
10
10
SD
-1
2
1
0
=f(T
-60
); t
0
p
=10 µs
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
25 °C
60
[°C]
1
[V]
25°C (98°C)
100
150°C (98%)
SPP11N80C3
1.5
140
2008-10-15
180
2