BF511T NXP Semiconductors, BF511T Datasheet - Page 2

• Manufacturer Part Number: BF511T
• Manufacturer: NXP Semiconductors

Specifications of BF511T

• Channel Type: N
• Configuration: Single
• Drain Current (max): 30mA
• Drain-gate Voltage (max): 20V
• Drain-source Volt (max): 20V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
QUICK REFERENCE DATA
December 1997
1
2
3
Drain-source voltage
Drain current (DC or average)
Total power dissipation
Drain current
Transfer admittance (common source)
Feedback capacitance
Noise figure at optimum source admittance
N-channel silicon field-effect transistors
up to T
V
V
V
V
G
V
V
= gate
= drain
= source
DS
DS
DS
DS
DS
DS
S
= 1 mS; B
= 10 V; V
= 10 V; V
= 10 V; V
= 10 V; I
= 10 V; V
= 10 V; I
amb
= 40 C
D
D
GS
GS
GS
GS
= 5 mA
S
= 5 mA
= 3 mS; f = 100 MHz
= 0
= 0; f = 1 kHz
= 0
= 0
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
handbook, halfpage
V
I
P
I
y
C
C
F
F
D
DSS
DS
tot
rs
rs
fs
 
2
Fig.1 Simplified outline and symbol.
Top view
max.
max.
max.


typ.
typ.
typ.
typ.
1
BF510
3
0.7
3.0
2.5
0.3
1.5


2
511
2.5
7.0
0.3
1.5
4


250
g
20
30
MAM385
512
0.3
1.5
BF510 to 513
12
Product specification
d
s
6
6


513
0.3 pF
1.5 dB
10 mA
18 mA
7 mS
 pF
 dB
V
mA
mW