BF545B NXP Semiconductors, BF545B Datasheet - Page 3

• Manufacturer Part Number: BF545B
• Description: TRANSISTOR, JFET, N, RF, SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF545B

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -30V
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Transistor Type: JFET
• Breakdown Voltage Vbr: 30V
• Zero Gate Voltage Drain Current Idss: 6mA To 15mA
• Gate-source Cutoff Voltage Vgs(off) Max: 7.5V
• Power Dissipation Pd: 250mW
• Transistor Case: RoHS Compliant
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
9397 750 13391
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Symbol
V
V
V
I
P
T
T
Symbol
R
G
Fig 1. Power derating curve.
stg
j
DS
GSO
GDO
tot
th(j-a)
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
Parameter
thermal resistance from junction to
ambient
Limiting values
Thermal characteristics
Parameter
drain-source voltage (DC)
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
2
2
.
.
(mW)
P
tot
Rev. 03 — 5 August 2004
400
300
200
100
0
0
BF545A; BF545B; BF545C
50
N-channel silicon junction field-effect transistors
Conditions
open drain
open source
T
amb
100
Conditions
25 C
150
T
amb
mbb688
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
[1]
200
Min
-
-
-
-
-
-
65
[1]
Typ
500
Max
10
250
+150
150
30
30
30
Unit
K/W
Unit
V
V
V
mA
mW
C
C
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