NE651R479A-T1-A California Eastern Labs, NE651R479A-T1-A Datasheet - Page 7

• Manufacturer Part Number: NE651R479A-T1-A
• Manufacturer: California Eastern Labs

Specifications of NE651R479A-T1-A

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): 4V
• Drain-source Volt (max): 8V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: 79A
• Lead Free Status / RoHS Status: Compliant

TYPiCAL APPLiCATiON CiRCuiT PERFORMANCE at V
20
18
16
14
12
10
-10
-20
-30
-40
-50
-60
8
6
4
2
0
20
10
0
18
17
16
15
14
13
12
10
11
POWER ADDED EFFICIENCY& GAIN vs.
0 2
9
8
0
THiRD ORDER iNTERMODuLATiON vs.
Gain, I
PAE, I
Gain, I
PAE, I
Gain, I
PAE, I
F
VDS = 3.5 V
2
GAiN AND SATuRATED POWER vs.
4 6 8 10 12 14 16 18
C
1.9
4
Total Output Power, P
= 1.96 GHz, P
DSQ
DSQ
DSQ
DSQ
DSQ
DSQ
Output Power, P
6
TOTAL OuTPuT POWER
1.92
8
= 50 mA
= 100 mA
= 250 mA
= 50 mA
= 100 mA
= 250 mA
OuTPuT POWER
10
Frequency, f (GHz)
12
1.94
FREQuENCY
14
OUT
16
= Each Tone
18
1.96
20 22 24 26 28 30 32 34
20
Gain (db) 3.5 V at 50 mA
Gain (db) 3.5 V at 250 mA
P
P
OUT
OUT
OUT
22
I
I
I
OUT
1.98
DSQ
DSQ
DSQ
F
V
(dBm)
(db) 3.5 V at 50 mA
(db) 3.5 V at 250 mA
24
C
DS
= 1.96 GHz,
26
= 50 mA
= 100 mA
= 250 mA
(dBm)
= 3.5 V
28
2.00
30
32
2.02
34
70
60
50
40
30
20
10
0
30
29
28
27
26
25
20
18
16
14
12
10
-10
-20
-30
-40
-50
-60
8
6
4
2
0
20
10
0
18
17
16
15
14
13
12
10
DS
11
POWER ADDED EFFICIENCY& GAIN vs.
0 2
9
8
THiRD ORDER iNTERMODuLATiON vs.
0
Gain, I
PAE, I
Gain, I
PAE, I
Gain, I
PAE, I
2
F
VDS = 5 V
= 3.5 V and V
GAiN AND SATuRATED POWER vs.
4 6 8 10 12 14 16 18
C
1.9
4
Total Output Power, P
= 1.96 GHz, P
Output Power, P
DSQ
DSQ
DSQ
DSQ
DSQ
DSQ
6
TOTAL OuTPuT POWER
1.92
8
= 50 mA
= 100 mA
= 250 mA
= 50 mA
= 100 mA
= 250 mA
OuTPuT POWER
10
12
Frequency, f (GHz)
1.94
FREQuENCY
OUT
14
16
= Each Tone
18
1.96
20 22 24 26 28 30 32 34
Gain (db) 5 V at 50 mA
Gain (db) 5 V at 250 mA
P
P
OUT
20
OUT
OUT
DS
22
F
VDS = 5 V
I
I
I
C
DSQ
DSQ
DSQ
1.98
(dBm)
OUT
(db) 5 V at 50 mA
(db) 5 V at 250 mA
24
= 1.96 GHz,
= 5 V
26
= 50 mA
= 100 mA
= 250 mA
(dBm)
28
2.00
30
32
2.02
34
70
60
50
40
30
20
10
0
33
32
31
30
29
28