NE651R479A-T1-A California Eastern Labs, NE651R479A-T1-A Datasheet - Page 10

• Manufacturer Part Number: NE651R479A-T1-A
• Manufacturer: California Eastern Labs

Specifications of NE651R479A-T1-A

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): 4V
• Drain-source Volt (max): 8V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: 79A
• Lead Free Status / RoHS Status: Compliant

(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC
(3) CGSO
(4) CGDO
NONLiNEAR MODEL
SCHEMATiC
FET NONLiNEAR MODEL PARAMETERS
Parameters
CGDO
DELTA1
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
DELTA
CGSO
DELTA2
CDS
RDB
VTO
CBS
VBR
TAU
RIS
VBI
RID
FC
IS
Q
N
(4)
(3)
(2)
100e-12
-0.9255
0.2e-12
1.1e-12
30e-12
14e-12
Infinity
0.964
0.002
1e-16
1.5
1.5
0.6
0.3
0.2
0.5
Q1
60
0
0
0
1
0
0
Parameters
BETATCE
RGMET
VTOTC
TNOM
FFE
XTI
RG
RD
EG
RS
KF
AF
GATE
GAMMA
CGS
CGD
Lspkg
L=0.001 nH
0.05
1.43
1.0
0.2
Q1
27
0
0
1
3
0
0
1
Cdspkg
C=0.1 pF
Lg
L=1.45 nH
(1)
Q1
MODEL RANGE
Frequency:
Bias:
Date:
uNiTS
Ldpkg
L=0.001 nH
Ld
L=0.55 nH
Lspkg
L=0.001 nH
SOURCE
capacitance
inductance
resistance
Parameter
DRAIN
Cdspkg
C=0.1 pF
0.5 to 4 GHz
V
6/02/2003
DS
= 2.2 V to 4.6 V, I
picofarads
nanohenries
ohms
units
D
= 50 mA to 350 mA
A Business Partner of NEC Electronics Corporation
05/06/2008