TIM6472-45SL Toshiba, TIM6472-45SL Datasheet

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TIM6472-45SL

Manufacturer Part Number
TIM6472-45SL
Description
Manufacturer
Toshiba
Datasheet
1.TIM6472-45SL.pdf (4 pages)

Specifications of TIM6472-45SL

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Channel Temperature Rise
Recommended Gate Resistance(Rg): 28 Ω (Max.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 35.5dBm
Single Carrier Level
HIGH POWER
P1dB=46.5dBm at 6.4GHz to 7.2GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
η
th(c-c)
IM
GSoff
I
DSS
ΔG
gm
GSO
1dB
DS
1dB
add
3
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
f = 6.4 to 7.2GHz
Two-Tone Test
CONDITIONS
CONDITIONS
= 11.0A
= 170mA
Po=35.5dBm
= -500 μ A
= 3V
= 3V
= 3V
= 0V
VDS=10V
X Rth(c-c)
HIGH GAIN
G1dB=8.0dB at 6.4GHz to 7.2GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-45SL
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
V
A
V
MIN.
46.0
MIN.
-1.0
-42
7.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
TYP. MAX.
46.5
TYP. MAX.
8000
-45
8.0
9.6
-2.5
Rev. Jul. 2006
37
0.8
⎯
⎯
24
⎯
10.8
±0.8
100
-4.0
⎯
⎯
⎯
⎯
1.2
⎯
⎯
⎯

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TIM6472-45SL Summary of contents

Page 1

... X Rth(c-c) SYMBOL CONDITIONS 11. GSoff 170mA DSS -500 μ GSO R Channel to Case th(c-c) TIM6472-45SL UNIT MIN. TYP. MAX. dBm 46.0 46.5 dB 7.0 8.0 ⎯ A 9.6 ⎯ ⎯ dB ⎯ dBc -42 -45 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 8000 V -1.0 -2.5 ⎯ ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM6472-45SL SYMBOL ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅9. Pin=38.5dBm 6.4 6.5 Output Power(Pout) vs. Input Power(Pin) 49 freq.=7.2GHz 48 V =10V DS ≅9. TIM6472-45SL 6.6 6.7 6.8 6.9 Frequency (GHz) Pout ηadd 36 38 Pin(dBm) 3 7.0 7.1 7 ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 130 110 IM3 vs. Output Power Characteristics -10 V =10V DS ≅9. freq.=7.2GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM6472-45SL 80 120 Tc( ° 200 160 38 40 ...

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