TIM6472-25UL TOSHIBA Semiconductor CORPORATION, TIM6472-25UL Datasheet
TIM6472-25UL
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TIM6472-25UL Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM6472-25UL n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE SYMBOL ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM6472-25UL SYMBOL ...
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... RF PERFORMANCE 47 VDS= 10V IDS 6.8A 46 Pin= 35.0dBm 6.2 6 6.8GHz VDS= 10V 45 IDS 6. TIM6472-25UL Output Power vs. Frequency 6.6 6.8 7 Frequency (GHz) Output Power vs. Input Power Pin (dBm) 3 7.2 7.4 7.6 7 ηadd ...
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... TIM6472-25UL Power Dissipation vs. Case Temperature 120 100 (℃) IM3 vs. Output Power Characteristics -20 VDS= 10V IDS 6.8A f= 6.8GHz f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...