NE85639-T1-A California Eastern Labs, NE85639-T1-A Datasheet - Page 3

NE85639-T1-A

Manufacturer Part Number
NE85639-T1-A
Description
Manufacturer
California Eastern Labs
Datasheet

Specifications of NE85639-T1-A

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage(max)
20V
Emitter-base Voltage (max)
3V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
50
Power Dissipation
200mW
Frequency (max)
9GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-143
Lead Free Status / RoHS Status
Compliant
TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
in
2. Maximum T
SYMBOLS
V
V
V
T
CBO
CEO
EBO
T
STG
I
C
J
300
100
400
200
5.0
0.5
3.0
2.0
1.0
0.7
0.3
0.2
0.1
0
permanent damage.
0
1
Collector to Emitter Voltage
J
Collector to Base Voltage
TOTAL POWER DISSIPATION vs.
NE85633
Collector to Base Voltage, V
Emitter to Base Voltage
for the NE85600 and NE85635 is 200°C.
CAPACITANCE vs. COLLECTOR
Junction Temperature
Storage Temperature
Ambient Temperature, T
Collector Current
AMBIENT TEMPERATURE
PARAMETERS
2
NE85633 AND NE85635
COLLECTOR TO BASE
50
TO BASE VOLTAGE
3
NE85635
5
100
7
10
NE85635
NE85634
150
A
20
1
UNITS
CB
(°C)
NE85632/
(T
mA
°C
°C
V
V
V
(V)
A
30
(T
33
= 25°C)
A
200
= 25°C)
50
-65 to +150
RATINGS
150
100
3.0
20
12
2
500
300
200
100
2.4
2.0
1.6
1.2
0.8
50
10
0.4
70
30
20
0
1
0
3.8
NE85632
Free Air
NE85634
Free Air
Aluminum
Heat Sink
for NE85632
V
CE
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
Ambient Temperature, T
= 10 V
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
2
NE85632 AND NE85634
Collector Current, I
3
7.8
10
50
NE85632
with Heat
5
NE85634
Ceramic Substrate
2.5 cm X 0.7 mm
R
TH (J-A)
Sink
7
2
10
= 62.5˚C/W
100
C
NE856 SERIES
(mA)
A
20
(°C)
30
150
50

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