NE85639-T1-A California Eastern Labs, NE85639-T1-A Datasheet

NE85639-T1-A

Manufacturer Part Number
NE85639-T1-A
Description
Manufacturer
California Eastern Labs
Datasheet

Specifications of NE85639-T1-A

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage(max)
20V
Emitter-base Voltage (max)
3V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
50
Power Dissipation
200mW
Frequency (max)
9GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-143
Lead Free Status / RoHS Status
Compliant
• HIGH GAIN BANDWIDTH PRODUCT:
• LOW NOISE FIGURE:
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST
DESCRIPTION
Date Published: June 28, 2005
FEATURES
NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
wide dynamic range and excellent linearity. The NE856 series
offers excellent performance and reliability at low cost. This is
achieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
package for high frequency applications. It is also available in
several low cost plastic package styles.
f
1.1 dB at 1 GHz
T
= 7 GHz
2.0
4.0
3.5
3.0
2.5
1.5
1.0
0.4 0.5
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
NOISE FIGURE AND GAIN
G
Frequency, f (GHz)
A
vs. FREQUENCY
V
CC
1.0
NE85600
= 10 V, I
MSG
C
7 mA
2
NF
MIN
3
FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH
MAG
4
5
10
15
20
5
18 (SOT 343 STYLE)
00 (CHIP)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
32 (TO-92)
NE856 SERIES
NPN SILICON RF TRANSISTOR
35 (MICRO-X)
34 (SOT 89 STYLE)
39R (SOT 143R STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
33 (SOT 23 STYLE)

Related parts for NE85639-T1-A

NE85639-T1-A Summary of contents

Page 1

FEATURES • HIGH GAIN BANDWIDTH PRODUCT GHz T • LOW NOISE FIGURE: 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial ...

Page 2

... NE85634 NE85635 NE85639/39R 2SC3357 2SC3603 2SC4093 34 35 TYP MAX MIN TYP MAX MIN TYP MAX 6.5 7.0 1.4 2.1 3.4 13 120 300 ...

Page 3

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Junction Temperature J T Storage Temperature STG Notes: 1. Operation in excess ...

Page 4

TYPICAL PERFORMANCE CURVES NE85634 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY 25 20 MAG 21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 V ...

Page 5

TYPICAL PERFORMANCE CURVES NE85633 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 15 2 |S21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) NE85600 TYPICAL NOISE ...

Page 6

... FREQ. 82 0.80 (MHz) 118 0. 142 0.23 500 700 84 0.33 1000 120 0.18 1500 146 0.10 2000 170 0.05 -161 0.13 NE85639 88 0.16 TYPICAL NOISE PARAMETERS 133 0.13 152 0.07 FREQ. 175 0.04 (MHz) -155 0. 2 500 87 0.20 800 145 0. 2 -138 ...

Page 7

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 -j10 -j25 NE85600 -j50 FREQUENCY S 11 (MHz) MAG ANG 100 0.881 -40.9 200 0.833 -75.0 500 0.803 -129.8 ...

Page 8

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85618 -0 FREQUENCY S 11 (MHz) MAG ...

Page 9

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.2 -0.4 NE85619 -0 FREQUENCY S 11 (MHz) MAG ANG 50 ...

Page 10

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 0.8 0.6 0.4 S 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85630 -0 2 FREQUENCY S 11 (MHz) MAG ANG 50 0.931 ...

Page 11

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85632 FREQUENCY S 11 (MHz) MAG ANG 100 0.71 -50 ...

Page 12

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85633 FREQUENCY S 11 (MHz) MAG ...

Page 13

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85634 FREQUENCY S 11 (MHz) MAG ANG 100 0.714 -42.6 ...

Page 14

TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85635 FREQUENCY S 11 (MHz) MAG ANG 100 ...

Page 15

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85639 FREQUENCY S 11 (MHz) MAG ANG 100 .968 -27 500 .785 -103 1000 .712 -156 1500 .716 172 2000 .739 150 2500 .775 134 3000 .793 ...

Page 16

NE85618 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...

Page 17

NE85619 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...

Page 18

NE85630 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...

Page 19

NE85633 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...

Page 20

NE85635 NONLINEAR MODEL SCHEMATIC BASE BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...

Page 21

... NE85639 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR 3.9 ITF IKR 0.17 PTF ISC 0.38 XTB RB 4.16 XTI RBM 3.6 KF IRB 1 ...

Page 22

OUTLINE DIMENSIONS (Units in mm) NE85600 (CHIP) 0.35 0.30 0.22 BASE EMITTER 0.07φ (Chip Thickness: 140 to 160 μm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 ...

Page 23

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 2 0.65 2.0 ± 0.2 1 MARKING 1. Emitter 0.15 2. Base 3. Collector 0.9 ± 0 0.1 PACKAGE OUTLINE 32 ...

Page 24

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0. 45˚ E 2.55±0.2 φ2.1 +0.06 0.1 -0.04 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0 2.9 ± 0.2 0.95 0.85 ...

Page 25

... NE85632-A 1 NE85633-T1B-A 3000 NE85634-T1-A 1000 NE85635 1 NE85639-T1-A 3000 NE85639R-T1 3000 Note: 1. Embossed tape 12 mm wide. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 26

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

Related keywords