FP15R12W1T3 Infineon Technologies, FP15R12W1T3 Datasheet - Page 2

• Manufacturer Part Number: FP15R12W1T3
• Description: IGBT Modules N-CH 1.2KV 25A
• Manufacturer: Infineon Technologies

Specifications of FP15R12W1T3

• Configuration: Array 7
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 25 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY1B
• Packages: AG-EASY1B-1
• Ic (max): 15.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3 Fast
• Housing: EasyPIM™ 1B
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Diode-Gleichrichter / diode-rectifier
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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preliminary data
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