FZ1800R17KE3_B2 Infineon Technologies, FZ1800R17KE3_B2 Datasheet - Page 7

• Manufacturer Part Number: FZ1800R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 2.85KA
• Manufacturer: Infineon Technologies

Specifications of FZ1800R17KE3_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 2850 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 1,800.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FZ1800R17KE3_B2
#
7
! "
Vorläufige Daten
preliminary data