FF600R17KE3_B2 Infineon Technologies, FF600R17KE3_B2 Datasheet - Page 2

• Manufacturer Part Number: FF600R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 950A
• Manufacturer: Infineon Technologies

Specifications of FF600R17KE3_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 950 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 600.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
>
4
4
>
B
7h
4
O
'
=
7
c
C
&
&
(
(
C
(
&
I & C
(
'
(
'
(
(
I & C
(
&
(
C
6 `
6
(
>
(
&
(
(
(
FF600R17KE3_B2
)*+ , -.
/@ ,
7g , ;
7g , ;
7g , ;
/@ , <
/E1 , "- /
7g , ;
/@ , <
/E1 , "- /
7g , ;
/@ , <
/E1 , "- /
d?KJDS , "
? , " &
4
4
/6 ? , " & 6 )*+ , " -.
=6 /E1 ,
=6 /E1 ,
=6
=6
=6
/
/
/
G
#
GV&_$W G
gG
gG
gG
, !3- =GN
, !3- =GN
, !3- =GN
/
/
deUSKJS , "
2
! ""
GV&_$W
)*+ , -.
)*+ , " -.
)*+ , -.
)*+ , " -.
)*+ , -.
)*+ , " -.
)*+ , -.
)*+ , " -.
Vorläufige Daten
preliminary data
ODL0f
/@@A
ODLb0
7g@A
%USi
7@A
/g
MU
7h
7g
& #
"3
"
"6;
"63
;
" -
3"
33-
"5
!
"
;6
"
#
& H#
--6
6
$G
$G
N
N
&[
&[
=h
/
=
=
/
/
=
=