BSM200GA170DLC Infineon Technologies, BSM200GA170DLC Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSM200GA170DLC
Manufacturer Part Number
BSM200GA170DLC
Description
IGBT Modules N-CH 1.7KV 400A
Manufacturer
Infineon Technologies
Datasheet
1.BSM200GA170DLC.pdf
(9 pages)
Specifications of BSM200GA170DLC
Configuration
Single Dual Emitter
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
400 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
200.0 A
Vce(sat) (typ)
2.6 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM200GA170DLC
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM200GA170DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM200GA170DLC
Quantity:
50
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
350
300
250
200
150
100
250
200
150
100
50
50
0
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
50
5
100
Eoff
Eon
Erec
10
BSM 200 GA 170 DLC
150
Eoff
Eon
Erec
15
E
on
R
gon
200
= f (I
6(8)
= R
R
I
E
C
goff
G
C
20
[A]
on
[ ]
) , E
I
=7,5 , V
C
= 200A , V
= f (R
250
off
CE
= f (I
G
= 900V, T
CE
) , E
25
= 900V , T
C
300
) , E
off
j
= 125°C
= f (R
rec
j
= 125°C
30
= f (I
350
G
) , E
C
)
rec
35
400
= f (R
G
)
BSM200GA170DLC
450
40