BSM50GP60G Infineon Technologies, BSM50GP60G Datasheet - Page 7
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BSM50GP60G
Manufacturer Part Number
BSM50GP60G
Description
IGBT Modules 600V 50A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GP60G.pdf
(12 pages)
Specifications of BSM50GP60G
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
70 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM50GP60G
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM50GP60G
Quantity:
50
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
3,5
2,5
1,5
0,5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
5
20
10
Eon
Eoff
Erec
Eon
Eoff
Erec
15
BSM50GP60G
40
20
R
I
C
G
[A]
7(11)
E
[ ]
T
E
T
on
j
= 125°C,
j
on
= 125°C, V
= f (I
60
25
= f (R
C
), E
G
), E
GE
off
30
V
= +-15 V ,
off
GE
= f (I
= ±15 V,
= f (R
80
C
), E
35
G
), E
rec
I
c
= I
= f (I
rec
nenn
R
Gon
40
= f (R
C
,
100
)
= R
V
V
CC
CC
G
Goff
)
=
=
=
45
300 V
22 Ohm
300 V
120
50
DB-PIM-10.xls