BSM300GA170DL Infineon Technologies, BSM300GA170DL Datasheet - Page 2
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BSM300GA170DL
Manufacturer Part Number
BSM300GA170DL
Description
IGBT Modules N-CH 1.7KV 600A
Manufacturer
Infineon Technologies
Datasheet
1.BSM300GA170DL.pdf
(4 pages)
Specifications of BSM300GA170DL
Configuration
Single Dual Emitter
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
600 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM300GA170DLC
Manufacturer:
Danfuss
Quantity:
1 000
Part Number:
BSM300GA170DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM300GA170DLC
Quantity:
50
Company:
Part Number:
BSM300GA170DLS
Manufacturer:
Infinoen
Quantity:
1 000
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values: Transistor
Charakteristische Werte / Characteristic values: Diode
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
BSM 300 GA 170 DL
collector-emitter voltage
DC-collector current
repetitive peak collector current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
I
insulation test voltage
collector-emitter saturation voltage
gate threshold voltage
input capacitance
collector-emitter cut-off current
gate-emitter leakage current
turn-on delay time (inductive load)
rise time (inductive load)
turn off delay time (inductive load)
fall time (inductive load)
turn-on energy loss per pulse
turn-off energy loss per pulse
SC Data
stray inductance module
forward voltage
peak reverse recovery current
recovered charge
reverse recovery energy
thermal resistance, junction to case Transistor / transistor, DC
thermal resistance, case to heatsink pro Module / per Module
max. junction temperature
operating temperature
storage temperature
internal insulation
creepage distance
clearance
comperative tracking index
mounting torque
terminal connection torque
weight
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
R
I
R
t
T
I
I
I
V
V
I
V
V
I
V
V
Diode / diode, DC
d
terminals M4
terminals M6
p
p
C
C
C
C
C
C
C
C
C
P
V
F
F
F
F
F
Paste
C
C
C
R
CE
CE
CE
GE
GE
GE
GE
GE
GE
GE
GE
Vj
R
R
R
R
R
R
G
G
= 1 ms, T
= 1 ms
CEmax
= 300A, V
= 300A, V
= 300A, - di
= 300A, - di
= 300A, - di
= 300A, V
= 300A, V
= 14mA, V
= 300A, V
= 300A, V
= 300A, V
= 300A, V
= 300A, V
= 300A, V
= 80°C
= 25°C
= 25°C, Transistor
= 0V, t
= 5 , T
= 5 , T
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
125°C, V
= 1700V, V
= 1700V, V
= 0V, V
10µsec, V
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
=V
50µm / d
p
CES
vj
vj
vj
= 10ms, T
GE
C
GE
GE
GE
GE
CE
CE
CE
CE
CE
CE
= 125°C, L
= 125°C, L
CE
= 25°C,V
CC
GE
GE
GE
GE
GE
GE
= 80°C
-L
F
F
F
GE
= 20V, T
/dt = 4500A/µsec
/dt = 4500A/µsec
/dt = 4500A/µsec
= 0V, T
= 0V, T
= 15V, T
= 15V, T
= 900V
G
G
= 900V
G
G
= 900V
G
G
= 900V
G
G
= 900V, V
= 900V, V
GE
GE
=1000V
sCE
= V
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
grease
= 5 , T
= 5 , T
= 5 , T
= 5 , T
= 5 , T
= 5 , T
= 5 , T
= 5 , T
= 0V, T
= 0V, T
15V, R
GE
x dI/dt
, T
Vj
CE
vj
vj
vj
S
S
= 125°C
50µm
vj
vj
vj
= 25°C
= 125°C
= 25V, V
vj
vj
vj
vj
vj
vj
vj
vj
= 25°C
GE
= 60nH
GE
= 60nH
= 25°C
= 125°C
vj
vj
vj
vj
vj
vj
= 25°C
vj
vj
G
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 15V
= 15V
= 5
GE
= 0V
V
I
I
I
P
V
I
I
I
V
v
v
C
I
I
t
t
t
t
E
E
I
L
V
I
Q
E
R
R
T
T
T
max.
max.
max.
G
C,nom.
C
CRM
F
FRM
2
CES
GES
d,on
r
d,off
f
SC
RM
CE sat
GE(th)
t
sCE
CES
tot
GES
ISOL
on
off
F
rec
vj
op
stg
ies
thJC
thCK
r
min.
-40
-40
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
vorläufige Daten
preliminary data
1200
0,03
0,03
130
220
330
typ.
2,7
3,2
5,5
0,1
0,1
0,1
0,1
0,1
0,8
0,9
2,2
20
95
15
34
75
16
31
8
2
-
-
-
-
-
-
-
29000 A
0,012 K/W
Al
1700 V
2500 W
max.
± 20 V
0,05 K/W
0,12 K/W
300 A
600 A
600 A
300 A
600 A
200 nA
150 °C
125 °C
125 °C
420 g
2
3,4 kV
3,3 V
6,5 V
0,6 mA
2,6 V
O
20 mm
11 mm
5 Nm
2 Nm
5 Nm
3
- V
- nF
- mA
- µs
- µs
- µs
- µs
- µs
- µs
- µs
- µs
- mWs
- mWs
- A
- nH
- V
- A
- A
- µAs
- µAs
- mWs
- mWs
2
s